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  2007-03-28 1 smbt3904...pn npn / pnp silicon switching transistor array ? high current gain ? low collector-emitter saturation voltage ? two (galvanic) internal isolated npn / pnp transistor in one package ? pb-free (rohs compliant) package 1) ? qualified according aec q101 SMBT3904PN smbt3904upn eha07177 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package SMBT3904PN smbt3904upn s3p s3p 1=e 1=e 2=b 2=b 3=c 3=c 4=e 4=e 5=b 5=b 6=c 6=c sot363 sc74 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 40 v collector-base voltage v cbo 40 emitter-base voltage v ebo 6 collector current i c 200 ma total power dissipation- t s 115 c, SMBT3904PN t s 105 c, smbt3904upn p tot 250 330 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 1 pb-containing package may be available upon special request
2007-03-28 2 smbt3904...pn thermal resistance parameter symbol value unit junction - soldering point 1) SMBT3904PN smbt3904upn r thjs 140 135 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 40 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 40 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 6 - - collector-base cutoff current v cb = 30 v, i e = 0 i cbo - - 50 na dc current gain 2) i c = 100 a, v ce = 1 v i c = 1 ma, v ce = 1 v i c = 10 ma, v ce = 1 v i c = 50 ma, v ce = 1 v i c = 100 ma, v ce = 1 v h fe 40 70 100 60 30 - - - - - - - 300 - - - collector-emitter saturation voltage 2) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma v cesat - - - - 0.25 0.4 v base emitter saturation voltage 2) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma v besat 0.65 - - - 0.85 0.95 1 for calculation of r thja please refer to application note thermal resistance 2 pulse test: t < 300s; d < 2%
2007-03-28 3 smbt3904...pn electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t 250 - - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - - 3.5 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - - 10 delay time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t d - - 35 ns rise time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t r - - 35 storage time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1 ma t stg - - 225 fall time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1 ma t f - - 75 noise figure i c = 100 a, v ce = 5 v, f = 1 khz, ? f = 200 hz, r s = 1 k ? f - - 5 db
2007-03-28 4 smbt3904...pn dc current gain h fe = ? ( i c ) v ce = 10 v, normalized ehp00765 10 10 ma h c 5 fe 10 1 0 10 -1 5 10 10 10 -1 0 1 2 125 c 25 c -55 c 55 2 saturation voltage i c = ? ( v besat ; v cesat ) h fe = 10 ehp00756 2 0 v be sat c 10 1 10 0 5 v ma 0.2 0.4 0.6 0.8 1.0 1.2 ce sat v , 5 10 2 v be v ce total power dissipation p tot = ? ( t s ) SMBT3904PN 0 15 30 45 60 75 90 105 120 c 150 t s 0 25 50 75 100 125 150 175 200 225 250 mw 300 p tot total power dissipation p tot = ? ( t s ) smbt3904upn 0 15 30 45 60 75 90 105 120 c 150 t s 0 30 60 90 120 150 180 210 240 270 300 mw 360 p tot
2007-03-28 5 smbt3904...pn permissible pulse load p totmax / p totdc = ? ( t p ) SMBT3904PN 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = ? ( t p ) SMBT3904PN 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) smbt3904upn 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) smbt3904upn 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
2007-03-28 6 smbt3904...pn delay time t d = ? ( i c ) rise time t r = ? ( i c ) ehp00761 10 ma t c r 10 1 10 0 10 10 01 2 55 ns r t t d , 3 10 d t 10 2 10 3 = 3 v cc v 0 v v = 2 v be 40 v 15 v h fe = 10 storage time t stg = ? ( i c ) ehp00762 10 ma t c s 10 1 10 0 10 10 01 2 55 ns 3 10 10 2 10 3 h fe = 20 10 25 c 125 c 10 = 20 fe h fall time t f = ? ( i c ) ehp00763 10 ma t c f 10 1 10 0 10 10 01 2 55 ns 3 10 10 2 10 3 h fe = 20 25 c 125 c cc v = 40 v = 10 fe h rise time t r = ? ( i c ) ehp00764 10 ma t c r 10 1 10 0 10 10 01 2 55 ns 3 10 10 2 10 3 25 c 125 c cc v = 40 v = 10 fe h
2007-03-28 7 smbt3904...pn package sc74 package outline foot print standard packing 0.5 0.95 1.9 2.9 54 6 3 2 1 1.1 max. (0.35) (2.25) 0.2 2.9 b 0.2 +0.1 -0.05 0.35 pin 1 marking m b 6x 0.95 1.9 0.15 -0.06 +0.1 1.6 10? max. a 0.1 2.5 0.25 10? max. 0.1 0.1 a 0.2 m 0.1 max. 2.7 4 3.15 pin 1 marking 8 0.2 1.15 reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. manufacturer 2005, june date code (year/month) bcw66h type code pin 1 marking laser marking marking layout (example) small variations in positioning of date code, type code and manufacture are possible.
2007-03-28 8 smbt3904...pn p ackage sot363 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. small variations in positioning of date code, type code and manufacture are possible. manufacturer 2005, june date code (year/month) bcr108s type code pin 1 marking laser marking 0.3 0.7 0.9 0.65 0.65 1.6 0.2 4 2.15 1.1 8 2.3 pin 1 marking +0.1 0.2 1 6 23 5 4 0.2 2 +0.1 -0.05 0.15 0.1 1.25 0.1 max. 0.9 0.1 a -0.05 6x 0.1 m 0.65 0.65 2.1 0.1 0.1 0.1 min. m 0.2 a pin 1 marking
2007-03-28 9 smbt3904...pn edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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